absolute maximum ratings symbol parameter value units v dss drain to source voltage 80 v i d continuous drain current(@t c = 25 c) 75 a continuous drain current(@t c = 100 c) 52.5 a i dm drain current pulsed (note 1) 300 a v gs gate to source voltage 20 v e as single pulsed avalanche energy (note 2) 1310 mj e ar repetitive avalanche energy (note 1) 17.3 mj dv/dt peak diode recovery dv/dt (note 3) 7.0 v/ns p d total power dissipation(@t c = 25 c) 173 w derating factor above 25 c 1.15 w/c t stg, t j operating junction temperature & storage temperature - 55 ~ 175 c t l maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. 300 c thermal characteristics symbol parameter value units min. typ. max. r jc thermal resistance, junction-to-case - - 0.87 c/w r cs thermal resistance, case to sink - 0.5 - c/w r ja thermal resistance, junction-to-ambient - - 62.5 c/w 75a 80v n channel mosfet transistor applicationsl low voltage high-speed switching. t stg storage temp erature-55~175 t j operating junction te mperature 150 p d allowable power dissipationt c =25173w i d drain c urrentt c =2575a v gss gate-source voltage 2 0v v dss drain-source vo ltage 80v gate charge 80nc static drain source on-state resistance 0.015ohm @10v r dson qg
electrical characteristics ( t c = 25 c unless otherwise noted ) symbol parameter test conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0v, i d = 250ua 80 - - v ? - 2600 3380 pf c oss output capacitance - 940 1220 c rss reverse transfer capacitance - 210 275 dynamic characteristics t d(on) turn-on delay time v dd =40v, i d =75a, r g =25 ? - 30 70 ns t r rise time - 225 460 t d(off) turn-off delay time - 165 340 t f fall time - 155 320 q g total gate charge v ds =64v, v gs =10v, i d =75a (note 4, 5) - 80 105 nc q gs gate-source charge - 15 - q gd gate-drain charg e(miller charge) - 32 - source-drain diode ratings and characteristics symbol parameter test conditions min. typ. max. unit. i s continuous source current integral reverse p-n junction diode in the mosfet --75 a i sm pulsed source current - - 300 v sd diode forward voltage i s =75a, v gs =0v - - 1.5 v t rr reverse recovery time i s =75a, v gs =0v, di f /dt=100a/us -90-ns q rr reverse recovery charge - 250 - uc ? = 25c 3. i sd 75a, di/dt 300a/us, v dd bv dss , starting t j = 25c 4. pulse test : pulse width
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 10 -1 10 0 10 1 10 2 175
10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 n otes :
c h a r g e v g s 1 0 v q g q g s q g d 3 m a v g s d u t v d s 3 0 0 n f 5 0 k
peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g sam e type as d u t v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( d riv e r ) i sd ( d u t ) v ds ( d u t ) v dd body d iode forw ard volta g e d ro p v sd i fm , body d iode forw ard c urrent body d iode r everse c urrent i rm body d iode r ecovery dv/dt di/dt d = g a te p u ls e w id th g ate pulse period -------------------------- dut v ds + _ driver r g sam e type as d u t v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( d riv e r ) i sd ( d u t ) v ds ( d u t ) v dd body d iode forw ard volta g e d ro p v sd i fm , body d iode forw ard c urrent body d iode r everse c urrent i rm body d iode r ecovery dv/dt di/dt d = g a te p u ls e w id th g ate pulse period -------------------------- d = g a te p u ls e w id th g ate pulse period -------------------------- 75a 80v n channel mosfet transistor
package dimensions 4.50 0.20 9.90 0.20 1.52 0.10 0.80 0.10 2.40 0.20 10.00 0.20 1.27 0.10 ?.60 0.10 (8.70) 2.80 0.10 15.90 0.20 10.08 0.30 18.95max. (1.70) (3.70) (3.00) (1.46) (1.00) (45 ) 9.20 0.20 13.08 0.20 1.30 0.10 1.30 +0.1 0 ?.0 5 0.50 +0.10 ?.05 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] to-220 75a 80v n channel mosfet transistor
|
